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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD772 2SD772A 2SD772B
DESCRIPTION *With TO-220C package *High breakdown voltage *High speed switching APPLICATIONS *For power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER 2SD772 VCBO Collector-base voltage 2SD772A 2SD772B VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25 Open base Open collector Open emitter CONDITIONS VALUE 150 200 250 80 6 5 10 40 150 -50~150 V V A A W V UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage 2SD772 ICBO Collector cut-off current 2SD772A 2SD772B IEBO hFE tf fT Emitter cut-off current DC current gain Fall time Transition frequency
2SD772 2SD772A 2SD772B
CONDITIONS IC=0.2A; L=25mH IC=5A; IB=1A IC=5A ; VCE=4V VCB=150V; IE=0 VCB=200V; IE=0 VCB=250V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=5A ; VEB=-5V, IB1=0.8A IC=0.5A ; VCE=10V
MIN 80
TYP.
MAX
UNIT V
1.6 1.5
V V
1.0
mA
0.1 14 1 40
mA
s MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD772 2SD772A 2SD772B
Fig.2 Outline dimensions (unindicated tolerance:0.10mm)
3

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